Resistive Switching of SnO2 Thin Films on Glass Substrates-Reference-Cited by-同舟云学术

Resistive Switching of SnO2 Thin Films on Glass Substrates

Published:2011-01 Issue:1 Volume:126 Page:117-124
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Almeida Sergio¹,Aguirre Brandon¹,Marquez Noel¹,McClure John²,Zubia David¹

Affiliation:

1. a Electrical and Computer Engineering Department , University of Texas at El Paso , El Paso, Texas, 79968

2. b Materials and Metallurgical Engineering Department , University of Texas at El Paso , El Paso, Texas, 79968

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2011.575015

Reference9 articles.

1. Memristive switching mechanism for metal/oxide/metal nanodevices

2. Resistive switching effects of HfO2 high-k dielectric

3. Nanoparticle Assemblies as Memristors

4. Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

5. Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers;Electronics;2022-05-11

2. Phosphate incorporation in anodic hafnium oxide memristors;Applied Surface Science;2021-05

3. Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment;Journal of Electrical Engineering & Technology;2021-01-20

4. Planar and Nanostructured n‐Si/Metal‐Oxide/WO 3 /BiVO 4 Monolithic Tandem Devices for Unassisted Solar Water Splitting;Advanced Energy and Sustainability Research;2020-10-27

5. Complex dynamics from a novel memristive 6D hyperchaotic autonomous system;International Journal of Dynamics and Control;2019-04-06