THE EFFECTS OF PB EXCESS AND FREQUENCY ON POLARIZATION-VOLTAGE HYSTERESIS LOOPS IN Pb(Zr0.3Ti0.7)O3 THIN FILMS-Reference-Cited by-同舟云学术

THE EFFECTS OF PB EXCESS AND FREQUENCY ON POLARIZATION-VOLTAGE HYSTERESIS LOOPS IN Pb(Zr0.3Ti0.7)O3 THIN FILMS

Published:2010-06-15 Issue:1 Volume:113 Page:41-48
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

CHEN Z. H.¹,JIANG A. Q.¹,TANG T. A.¹

Affiliation:

1. a ASIC & System State Key Laboratory , Department of Microelectronics, Fudan University , Shanghai, 200433, People's Republic of China

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2009.490186

Reference15 articles.

1. Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications

2. Switching kinetics of lead zirconate titanate submicron thin‐film memories

3. Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films

4. The effect of excess Pb content on the crystallization and electrical properties in sol–gel derived Pb (Zr0.4Ti0.6)O3 thin films

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