Layered GeP2S6, GeP2Se6, GeP2Te6, SnP2S6, SnP2Se6, and SnP2Te6 Polar Crystals with Semiconductor–Metal Transitions Induced by Pressure or Chemical Composition-Reference-Cited by-同舟云学术

Layered GeP2S6, GeP2Se6, GeP2Te6, SnP2S6, SnP2Se6, and SnP2Te6 Polar Crystals with Semiconductor–Metal Transitions Induced by Pressure or Chemical Composition

Published:2021-10-13 Issue:1 Volume:220 Page:90-99
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Haborets V.¹,Glukhov K.¹,Banys J.²,Vysochanskii Yu.¹

Affiliation:

1. Institute for Solid State Physics and Chemistry, Uzhhorod University, Uzhhorod, Ukraine

2. Faculty of Physics, Vilnius University, Vilnius, Lithuania

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2021.1921538

Reference29 articles.

1. CuInP2S6 Room Temperature Layered Ferroelectric

2. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

3. Electric field control of the semiconductor-metal transition in two dimensional CuInP2S6/germanene van der Waals heterostructure

4. Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

5. Gate‐Coupling‐Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions

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