Low-Frequency Noise Characterization and Thermal Stability Analysis of Negative Capacitance Junction-Less Transistors-Reference-Cited by-同舟云学术

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Low-Frequency Noise Characterization and Thermal Stability Analysis of Negative Capacitance Junction-Less Transistors

Published:2023-02-12 Issue:1 Volume:232 Page:43-62
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Rai Manish Kumar¹,Rai Sanjeev¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology Allahabad, Prayagraj, India

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2173441

Reference30 articles.

1. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

2. Negative capacitance in ferroelectric materials and implications for steep transistors

3. C. W. Yeung et al., Non-hysteretic negative capacitance FET with sub- 30mV/dec swing over 106X current range and ION of 0.3mA/μm without strain enhancement at 0.3V VDD, Conf. Simul. Semicond. Processes Devices. SISPAD 2012, September 5–7, 2012, Denver, CO, USA (2012).

4. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

5. Nanowire transistors without junctions

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