Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation-Reference-Cited by-同舟云学术

Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

Published:2023-09-02 Issue:1 Volume:237 Page:208-215
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Gaibnazarov B. B.¹^ORCID,Imanova Gunel²³^ORCID,Khozhiev Sh. T.⁴,Kosimov I. O.⁴,Khudaikulov I. Kh.⁵,Kuchkanov Sh. K.⁵,Khallokov F. K.⁶,Bekpulatov I. R.¹^ORCID

Affiliation:

1. Tashkent State Technical University, Tashkent, Uzbekistan

2. Ministry of Science and Education Republic of Azerbaijan, Institute of Radiation Problems, Baku, Azerbaijan

3. UNEC Research Center for Sustainable Development and Green Economy named after Nizami Ganjavi, Azerbaijan

4. Institute of Bioorganic Chemistry named after acad. O.S. Sodykova AS Ruz

5. Institute of Ion-Plasma and Laser Technologies named after U.A. Arifova, AS Ruz

6. Institute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2239097

Reference19 articles.

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2. Raman scattering in mosaic silicon carbide films

3. Propagation of misfit dislocations from AlN/Si interface into Si;Sorokin L. M.;ZhTF Lett.,2008

4. Preparation and characterization of montmorillonite modified with 3-aminopropyltriethoxysilane;Kompan M. E.;Ftt,2009

5. A Raman Spectroscopy Study of Individual SiC Nanowires

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