Low-energy antimony implantation in silicon

Author:

Chu W. K.,Sullivan M. J.,Ku S. M.,Shatzkes M.

Publisher

Informa UK Limited

Subject

General Engineering

Reference10 articles.

1. Control of Schottky barrier height using highly doped surface layers

2. Thermionic-field emission through silicon Schottky barriers at room temperature

3. Ishiwara, H. and Furukawa, S. 1976.Ion Implantation in Semiconductors, Edited by: Chernow, F., Borders, J. A. and Brice, D. K. 375New York: Plenum.

4. Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation

5. Chu, W. K., Kastl, R. H. and Murley, P. C. 1978. Proc. 1st Int. Conf. on Ion Beam Modification of Materials. Sept.4–81978, Budapest, Hungary. Volume 1, pp.179–192. preceding paper in this journal

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1. The effect of silicon ion beam mixing on the barrier height of Sb/n-Si Schottky contacts;Applied Surface Science;1993-06

2. Effect of argon implantation on antimony implanted silicon;Solid-State Electronics;1989-06

3. Barrier height modification of metal/germanium Schottky diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-11

4. EXPERIMENTAL ANNEALING AND ACTIVATION;Ion Implantation Science and Technology;1988

5. A Novel CMOS SRAM Feedback Element for SEU Environments;IEEE Transactions on Nuclear Science;1987

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