Low-energy antimony implantation in silicon-Reference-Cited by-同舟云学术

Low-energy antimony implantation in silicon

Published:1980-01 Issue:1-4 Volume:47 Page:7-14
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Chu W. K.,Sullivan M. J.,Ku S. M.,Shatzkes M.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008209180

Reference10 articles.

1. Control of Schottky barrier height using highly doped surface layers

2. Thermionic-field emission through silicon Schottky barriers at room temperature

3. Ishiwara, H. and Furukawa, S. 1976.Ion Implantation in Semiconductors, Edited by: Chernow, F., Borders, J. A. and Brice, D. K. 375New York: Plenum.

4. Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation

5. Chu, W. K., Kastl, R. H. and Murley, P. C. 1978. Proc. 1st Int. Conf. on Ion Beam Modification of Materials. Sept.4–81978, Budapest, Hungary. Volume 1, pp.179–192. preceding paper in this journal

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1. The effect of silicon ion beam mixing on the barrier height of Sb/n-Si Schottky contacts;Applied Surface Science;1993-06

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