Lattice location of Co implanted in silicon-Reference-Cited by-同舟云学术

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Lattice location of Co implanted in silicon

Published:1980-01 Issue:1-4 Volume:47 Page:153-155
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Kótai E.,Lohner T.,Manuaba A.,Mezey G.,Coussement R.,Dézsi I.,Langouche G.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578008209202

Reference10 articles.

1. de Coster, M., Pollak, H. and Amelinckx, S. 1962.The Mössbauer Effect, Edited by: Compton, D. M. J. and Schoen, A. H. 289New York: John Wiley and Sons.

2. Mössbauer effect isomer shift of Fe57 in silicon and germanium

3. The 57Fe Mössbauer spectra in copper doped silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mössbauer spectroscopy study of the thermal annealing behavior of very low and very high dose Co-implanted Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

2. Characterization of Semiconductors by Mössbauer Spectroscopy;Mössbauer Spectroscopy Applied to Inorganic Chemistry;1989

3. Further localizations studies of Co atoms diffused into silicon;Nuclear Instruments and Methods in Physics Research;1982-08-01

4. Phenomenology of solid solubilities and ion-implantation sites: An orbital-radii approach;Physical Review B;1982-01-15

5. BIBLIOGRAPHY;Materials Analysis by Ion Channeling;1982

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