Author:
Bayerl P.,Ryssel H.,Ramin M.
Cited by
10 articles.
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1. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06
2. Range parameters of deep ion implants in group IV semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
3. Application of high energy implantation in semiconductors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1988-05
4. Properties of ion beam synthesized buried silicon nitride layers with rectangular nitrogen profiles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
5. High energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-01