Quantitative analysis of channeling data for the determination of the amorphous fraction in ion bombarded single crystals-Reference-Cited by-同舟云学术

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Quantitative analysis of channeling data for the determination of the amorphous fraction in ion bombarded single crystals

Published:1987-12 Issue:1-2 Volume:105 Page:9-15
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Benyagoub A.,Thomé L.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578708210058

Reference14 articles.

1. Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals

2. Doctorat ďEtat Thesis;Benyagoub A.,1986

3. Thomé, L. 1986. Proc. of the Int. Workshop onSolid State Reactions after Ion Implantation Detected by Nuclear Methods. 1986, Göttingen.

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