Deep level defects produced by electron irradiation and their annealings in undoped germanium-Reference-Cited by-同舟云学术

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Deep level defects produced by electron irradiation and their annealings in undoped germanium

Published:1986-09 Issue:1-2 Volume:97 Page:101-110
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Ito Kazuyoshi,Ito Takashi,Mizuno Kaoru

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578608208724

Reference23 articles.

1. Energy levels in electron irradiated n-type germanium

2. Bourgoin, J. C., Mooney, P. M. and Poulin, F. 1981.Defects and Radiation Effects in Semiconductors, Edited by: Hasiguti, R. R. 33Bristol and London: The Institute of Physics. 1980

3. Annealing of electron-induced defects inn-type germanium

4. Defect States in n-Type Germanium Irradiated with 1.5 MeV Electrons

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and annealing of vacancy-P complexes in proton-irradiated germanium;Acta Materialia;2015-11

2. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy;Acta Materialia;2015-01

3. Defects in electron-irradiated Ge studied by positron lifetime spectroscopy;Physical Review B;1999-04-15

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