Displacement threshold energies in binary compounds: Amorphous metallic alloy Fe75B25, low dimensional conductors TaS2and TaS3, homogeneous intermediate valence compound SmS-Reference-Cited by-同舟云学术

Displacement threshold energies in binary compounds: Amorphous metallic alloy Fe75B25, low dimensional conductors TaS2and TaS3, homogeneous intermediate valence compound SmS

Published:1983-01 Issue:1-2 Volume:77 Page:125-144
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Lesueur D.,Morillo J.,Mutkaj H.,Audouard A.,Jousset J. C.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578308224729

Reference27 articles.

1. Anisotropy of electron radiation damage in metal crystals

2. Anisotropic-Defect Introduction in GaAs by Electron Irradiation

3. Colour centres in electron irradiated mgo

4. Oxygen displacement energy in ZnO

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