The study of the flux-peaking effect at the planar channeling of protons in silicon by computer simulation

Author:

Dedkov G. V.,Kumakhov A. M.,Sokhov M. Z.

Publisher

Informa UK Limited

Subject

General Engineering

Reference10 articles.

1. On the spatial distribution of channelled ions

2. The interpretation of channelled-ion beam measurements for foreign atom location in crystals

3. Alexander, R. B.Dearnaley, G. 1971. p. 181Reading, England: Proc. of Europ. Conf. on Ion Implantation.

4. Beloshitskii, V. V., Wedell, R. and Kumakhov, A. M. 1975. p. 23Moscow: Rep. of the Seventh National Conf. on physics of interaction of charged particles with monocrystals.

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