A comparative study of boron and phosphorus doping effects in SiC : H films prepared by electron cyclotron resonance plasma CVD
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/002072198133770
Reference23 articles.
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3. Beyer , W. and Overhof , H. 1984. Semiconductors and Semimetals, Edited by: Pankove , J. I. Vol. 21C, 257New York: Academic Press.
4. Microvoids in diamond‐like amorphous silicon carbide
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1. Hydrogenated amorphous and crystalline SiC thin films grown by RF-PECVD and thermal MOCVD; comparative study of structural and optical properties;Surface and Coatings Technology;2003-07
2. Characterization of amorphous SIC:H thin films grown by RF plasma enhanced CVD on annealing temperature;Journal de Physique IV (Proceedings);2002-06
3. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
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