Annealing characteristics of hot carrier induced damage inn-channel MOSFETs
Author:
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00207219208925789
Reference20 articles.
1. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
2. Characteristics of Thermal Annealing of Radiation Damage in MOSFET's
3. Activation Energies of Thermal Annealing of Radiation-Induced Damage in N- and P-Channels of CMOS Integrated Circuits
4. Hot carrier effects in depletion-mode MOSFETs
5. Leakage current degradation in n-MOSFETs due to hot-electron stress
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. γ-Ray Irradiation Effect on the Intersubband Transition in Ingaas/Aigaas Multiple Quantum Wells;MRS Proceedings;1997
2. Hot-carrier dependent radiation effects in p-channel metal oxide semiconductor field effect transistors;Solid-State Electronics;1994-10
3. Hot carrier induced interface trap annealing in silicon field effect transistors;Journal of Applied Physics;1993-12-15
4. Hot carrier dependent radiation effects: New reliability issue for thin oxide devices;Microelectronic Engineering;1993-08
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