Systematic errors in dislocation densities measured by thin film electron microscopy

Author:

Foxon C. T. B.1,Rider J. G.1

Affiliation:

1. a Department of Physics , Battersea College of Technology , London , S.W. 11

Publisher

Informa UK Limited

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The interaction of conduction electrons with dislocations and grain boundaries in metals;Canadian Journal of Physics;1982-05-01

2. The dislocation cell size and dislocation density in copper deformed at temperatures between 25 and 700°C;Acta Metallurgica;1972-04

3. On dislocation loss in thin film electron microscopy of polycrystalline copper;The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics;1968-04

4. An experimental investigation of dislocation-phonon scattering in some copper alloys;Physica Status Solidi (b);1968

5. An experimental determination of the electrical resistivity of dislocations in copper;The Philosophical Magazine: A Journal of Theoretical Experimental and Applied Physics;1967-12

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