Optical and photoelectrochemical properties of nitrogen-doped a-SiC thin films deposited by reactive sputtering method at room temperature
Author:
Affiliation:
1. Research Center on Semiconductor Technology for Energetic, Thin Films Surfaces and Interfaces Division, CMSI-CRSTE, Algiers, Algeria
Funder
DGRSDT-ALGERIA
Publisher
Informa UK Limited
Subject
Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/2374068X.2021.1890420
Reference26 articles.
1. Harris GL, INSPEC. Short Run Press. 170, 1995. ISBN: 0 85296 870 1.
2. Park YS. Ed., SiC Materials and devices, Semiconductors and Semimetals, Vol. 52. Academic Press; 1998; p. 307.
3. 40Å Platinum–porous SiC gas sensor: Investigation sensing properties of H2 gas
4. Photochemical Conversion of CO2into Methyl Alcohol Using SiC Micropowder under UV Light
5. Deposition and optical studies of silicon carbide nitride thin films
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1. Studies on Structural and Electrical Characterization of Nitrogen Doped SiC Thin Films;2024 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2024-05-03
2. Elaboration and Characterization of Amorphous Silicon Carbide Thin Films (a-SiC) by Sputerring Magnetron Technique for Photoelectrochemical CO2 Conversion;Silicon;2022-09-06
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