Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium
Author:
Affiliation:
1. a Department of Physics , Faculty of Science, Naruto University of Education , Naruto, Tokushima 772, Japan
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420159208228869
Reference24 articles.
1. Investigations of Oxygen-Defect Interactions between 25 and 700°K in Irradiated Germanium
2. Annealing of N-type germanium irradiated with 500 keV electrons at 6 K
3. Observation of Irradiation‐Induced Interstitial Copper Impurity in Germanium
4. Ishino , S. and Mitchell , E. W. J. 1968. Lattice Defects in Semiconductors, Edited by: Hasiguti , R. R. 185Tokyo: Univ. of Tokyo Press.
5. Saito , H. Fukuoka , N. and Hattori , H. 1968. Radiation Effects in Semiconductors, Edited by: Vook , F. L. 232New York: Plenum Press.
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2. Formation and annealing of vacancy-P complexes in proton-irradiated germanium;Acta Materialia;2015-11
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4. Defects in electron-irradiated Ge studied by positron lifetime spectroscopy;Physical Review B;1999-04-15
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