Electron-irradiation-induced gold atom implantation into silicon carbide-Reference-Cited by-同舟云学术

Electron-irradiation-induced gold atom implantation into silicon carbide

Published:1992-03 Issue:1 Volume:124 Page:51-59
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Mori H.,Yasuda H.,Sakata T.,Fujita H.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159208219827

Reference19 articles.

1. Some Applications of an Ultra-High Voltage Electron Microscope on Materials Science

2. The research center for ultra-high voltage electron microscopy at Osaka University

3. Kiritani, M. 1977.Progress in the Study of Point Defects, Edited by: Doyama, M. and Yoshida, S. 247University of Tokyo Press.In Situ Experiments with HVEM, Ed. by H. Fujita (Res. Center for Ultra-High Voltage Electron Microscopy, Osaka University, Osaka, 1985) p. 183

4. Temperature Dependence of Electron-Irradiation Induced Amorphization of NiTi Alloys

5. Electron irradiation induced crystalline amorphous transitions in NiTi alloys

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3. Analysis of bonding state in pure and gold-implanted amorphous SiC by a combination of UHVEM and AES;Journal of Microscopy;1995-10

4. UHVEM and AES analysis of electron-irradiation-induced gold-atom implantation into silicon carbide;Ultramicroscopy;1994-11

5. High resolution electron microscopy study on crystallization of gold-implanted amorphous SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-10