Reversible change in sheet resistivity of Ar−ion implanted diamond by controlling two target temperatures during ion implantation
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420159208219826
Reference12 articles.
1. Electrical conductivity of nitrogen and argon implanted diamond
2. Electrical properties of Ti and Cr ion implanted diamonds dependent on target temperature
3. Target temperature dependence of sheet resistivity and structure of Ar-implanted diamonds
4. Raman scattering from ion-implanted graphite
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