Deep implants for semiconductor device applications-Reference-Cited by-同舟云学术

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Deep implants for semiconductor device applications

Published:1996-01 Issue:1 Volume:140 Page:87-101
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Frey L.¹,Bogen S.²,Herden M.¹,Ryssel H.¹²

Affiliation:

1. a Lehrstuhl für Elektronische Bauelemente , Universität Erlangen - Nürnberg, Cauerstrasse , 6, 91058 , Erlangen , Germany

2. b Fraunhofer Institut Für Integrierte Schaltungen , Schottkystrasse 10, 91058 , Erlangen , Germany

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420159608212943

Reference22 articles.

1. An antiproton beam and its interaction with gases and solids

2. Measurement of the stopping power of silicon for antiprotons between 0.2 and 3 MeV

3. Resolution of theΣ−-Mass Anomaly

4. z3Corrections to Energy Loss and Range

5. The Barkas effect - or Z13, Z14-corrections to stopping of swift charged particles

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