On the theory of enhanced diffusion in high-temperature antimony-implanted silicon-Reference-Cited by-同舟云学术

On the theory of enhanced diffusion in high-temperature antimony-implanted silicon

Published:1993-07 Issue:1 Volume:127 Page:75-82
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Antoncik E.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159308219899

Reference8 articles.

1. Gibbons, J. F. and Christel, L. A. 1984.Ion implantation and beam processing, Edited by: Williams, J. S. and Poate, J. M. 59Sidney: Academic Press. and references therein

2. Antoncik, E. Proc. Int. Conf. on the Science and Technology of Defect Control in Semiconductors. 1989, Yokohama. pp.471Amsterdam: North-Holland.

3. Antoncik, E. 1991. to be published in Red. Effects and Def. in Solids

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