Studies of disorder induced by ion implantation into silicon using in situ stress measurement technique-Reference-Cited by-同舟云学术

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Studies of disorder induced by ion implantation into silicon using in situ stress measurement technique

Published:1993-03 Issue:4 Volume:125 Page:275-287
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Yuan Jianzhong,Corbett James W.,Voronkov Sergei N.,Verner Igor V.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420159308220207

Reference20 articles.

1. Volkert, C. A. 1990.Beam-Solid Interactions: Physical Phenomena, MRS Symposia Proceedings, Edited by: Knapp, J., Borgesen, P. and Zuhr, R. A. 635Pittsburgh, PA: MRS.

2. Monitoring of low-dose ion implantation in silicon

3. Hoffman, R. W. 1966.Physics of Thin Films, Edited by: Thun, R. E. 211New York: Academic Press.

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