Near-infrared photodetectors based on polycrystalline Ge evaporated on Si(100) substrates
Author:
Affiliation:
1. a Department of Electronic Engineering , Terza University of Rome , Via della Vasca Navale 84, I-00146 , Rome , Italy
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642810008209785
Reference12 articles.
1. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
2. Structure of vapor‐deposited Ge films as a function of substrate temperature
3. Effects of thermal annealing on the optoelectronic properties of hydrogenated amorphous germanium
4. Normal‐incidence strained‐layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm
5. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress;Journal of Applied Physics;2007-03-15
2. Linear Array of Si–Ge Heterojunction Photodetectors Monolithically Integrated With Silicon CMOS Readout Electronics;IEEE Journal of Selected Topics in Quantum Electronics;2004-07
3. 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm;Applied Physics Letters;2003-04-14
4. Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics;Applied Physics Letters;2002-05-06
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