Photoinduced defects in wide-gap materials: Hydrogenated amorphous silicon-carbon and silicon-nitrogen films
Author:
Affiliation:
1. a ESSTT, 5 Avenue Taha Hussein , 1008 Tunis, Tunisia
2. b Dipartimento Fisica and Unità di Ricerca INFM, Istituto Nazionale per la Fisica della Materia, Politecnico di Torino , Corso Duca Abruzzi, 24, 10129 , Torino , Italy
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642810208223163
Reference23 articles.
1. Chapter 3 Optical Properties of Defect States in a-Si: H
2. Electronic and optical properties of a-Si1-xCx films prepared from a H2-diluted mixture of SiH4 and CH4
3. Density of gap states in a-SiC:H films by means of photoconductive and photothermal spectroscopies
4. Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma
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1. Modelling and analysis of a-SiC:H p–i–n photodetectors: Effect of hydrogen dilution on dynamic model;Solid-State Electronics;2007-07
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