Defects in silicon induced by high energy helium implantation and their evolution during anneals-Reference-Cited by-同舟云学术

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Defects in silicon induced by high energy helium implantation and their evolution during anneals

Published:2000-11 Issue:11 Volume:80 Page:1975-1985
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Beaufort M. F.¹,Oliviero E.¹,Garem H.¹,Godey S.²,Ntsoenzok E.²,Blanchard C.³,Barbott J. F.³

Affiliation:

1. a Laboratoire de Métallurgie Physique , UMR 6630, SP2M1, Bd3, Téléport 2, Futuroscope Cedex , 86960 , France

2. b CNRS/CERI , 3A rue de la Férollerie, 45071, Orléans Cedex , 2 , France

3. c Laboratoire de Métallurgie Physique , UMR 6630, SP2M1, Bd M. et P. Curie, BP 30179, Téléport 2, Futuroscope Cedex , 86960 , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810008216520

Reference17 articles.

1. Microstructural defects induced by implantation of hydrogen in (111) silicon

2. Transient enhanced diffusion of boron in presence of end-of-range defects

3. Impurity gettering to secondary defects created by MeV ion implantation in silicon

4. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

5. Loop-Punching as a Mechanism for Inert Gas Bubble Growth in Ion-Implanted Metals

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density functional theory calculations of helium clustering in mono‐, di‐, and hexa‐vacancy in silicon;physica status solidi (a);2017-06-08

2. Molecular dynamics simulation of the initial stages of He bubbles formation in silicon;Modelling and Simulation in Materials Science and Engineering;2013-07-12

3. First-principles calculations of helium and neon desorption from cavities in silicon;Journal of Physics: Condensed Matter;2012-04-05

4. Formation and growth of nanocavities and cavities induced by He+ implantation in silicon;Advances in Natural Sciences: Nanoscience and Nanotechnology;2012-03-01

5. Interaction of interstitials with buried amorphous layer in silicon;physica status solidi (c);2009-08

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