Composition dependence of positron states in zincblende Ga1−xInxN-Reference-Cited by-同舟云学术

Composition dependence of positron states in zincblende Ga1−xInxN

Published:2000-10 Issue:10 Volume:80 Page:1743-1756
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Bouarissa N.¹²

Affiliation:

1. a International Center for Theoretical Physics , Trieste , 34100 , Italy

2. b Physics Department , University of M'sila , M'sila , 28000 , Algeria

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642810008216503

Reference48 articles.

1. Electronic and Positronic Structure of Diamond under Normal and High Pressure

2. Aourag , H. West , R. N. Kaiser , J. H. and Kobayasi , T. 1989. Positron Annihilation, Edited by: Dorikens-Vanpraet , L. Dorikens , M. and Segers , D. 680Singapore: World Scientific.

3. Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs

4. Electron valence charge densities in Hg1−xCdxTe mixed crystals

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