Photoconductivity of Doped Amorphous Semiconductors at Low Temperatures-Reference-Cited by-同舟云学术

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Photoconductivity of Doped Amorphous Semiconductors at Low Temperatures

Published:1994-08 Issue:1 Volume:252 Page:23-30
ISSN:1058-725X
Container-title:Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
language:en
Short-container-title:Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals

Author:

Baranovskii S. D.¹²,Adriaenssens G. J.¹,Öktü Ö.³,Thomas P.²

Affiliation:

1. a Laboratorium voor Vaste-Stof-en Hoge-Drukfysica, K.U. Leuven , Celestijnenlaan 200 D, B-3001 , Leuven , Belgium

2. b Fachbereich Physik und Wiss. Zentrum für Materialwissenschaften der Philipps Universität Marburg , D-35032 , Marburg , Germany

3. c Department of Physics Engineering , Hacettepe University , 06532 , Ankara , Turkey

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/10587259408038207

Reference11 articles.

1. Some observations on the photoconductivity of amorphous semiconductors

2. Shklovskii , B. I. Levin , E. I. Fritzsche , H. and Baranovskii , S. D. 1990.Advances in Disordered Semiconductors 3, Edited by: Fritzsche , H. 161–191. Singapour: World Scientific.

3. Photoconductivity and photoluminescence of a-Si:H at low temperature

4. Steady-state transport under non-equilibrium conditions in undoped and phosphorus doped a-Si:H at very low temperature

5. Electronic transport and recombination in amorphous semiconductors at low temperatures

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