Two independent mechanisms of dynamical recovery in the high-temperature deformation of silicon and germanium-Reference-Cited by-同舟云学术

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Two independent mechanisms of dynamical recovery in the high-temperature deformation of silicon and germanium

Published:1984-07 Issue:1 Volume:50 Page:L1-L6
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Siethoff Hans¹,Ahlborn Karl²,Schröter Wolfgang²

Affiliation:

1. a Physikalisches Institut der Universität Würzburg , F.R. Germany

2. b IV. Physikalisches Institut der Universität Göttingen , F.R. Germany

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418618408244206

Reference18 articles.

1. New stages in stress—strain curves of germanium at high temperatures

2. Fluage du germanium sous différentes orientations

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring the high-temperature deformation behavior of monocrystalline silicon – An advanced nanoindentation study;Materials & Design;2023-09

2. Plastic Deformation in Silicon Crystal Induced by Heat-Assisted Laser Shock Peening;Journal of Manufacturing Science and Engineering;2008-02-01

3. Multiscale dislocation dynamics analyses of laser shock peening in silicon single crystals;International Journal of Plasticity;2006-12

4. Dislocation behavior in silicon crystal induced by laser shock peening: A multiscale simulation approach;Scripta Materialia;2005-11

5. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997

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