Low temperature nanocrystallízation of silicon carbide by hydrogen reactive magnetron sputtering
Author:
Publisher
Informa UK Limited
Subject
Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/01418610208239620
Reference34 articles.
1. Effects of hydrogen partial pressure on the structure and properties of sputtered silicon layers
2. In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer‐by‐layer technique
3. Annealing and crystallization processes in a hydrogenated amorphous SiC alloy film
4. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
5. Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-raydouble crystal topographic study
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1. Physical properties of SnO2 thin films prepared by isothermal oxidation of vacuum evaporated Sn;Journal of Materials Science: Materials in Electronics;2016-10-12
2. Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport;Journal of Physics D: Applied Physics;2011-05-18
3. Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen;Thin Solid Films;2010-10
4. Influence of hydrogen partial pressure on growth and properties of nanocrystalline SiC by magnetron sputtering;The European Physical Journal Applied Physics;2006-10
5. Low-temperature processing and properties of nanocrystalline-SiC/crystalline Si heterojunction devices;Solid-State Electronics;2006-02
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