Titanium Silicide Formation on Oxidized Si(001)-2×1 Studied with Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy-Reference-Cited by-同舟云学术

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Titanium Silicide Formation on Oxidized Si(001)-2×1 Studied with Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy

Published:2009 Issue:8 Volume:52 Page:461-464
ISSN:1882-4749
Container-title:Journal of the Vacuum Society of Japan
language:
Short-container-title:J. Vac. Soc. Jpn.

Author:

SATO Kazunari,SHUDO Ken-ichi,AOKI Takeshi,IIDA Takanori,NISHIOKA Hiroaki,TORAMARU Masamitsu,OHNO Shin-ya,TANAKA Masatoshi

Publisher

The Vacuum Society of Japan

Subject

Spectroscopy,Surfaces and Interfaces,Instrumentation,General Materials Science

Reference25 articles.

1. Observation of thermal growth of silicide on titanium-deposited silicon surfaces

2. Scanning tunnelling microscopy study of initial growth of titanium silicide on Si(111)

3. Dependence of the C49–C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation

4. On the role of oxygen in the catalysis of C54 titanium disilicide by Ti5Si3 phase

5. Investigation of surface crystallites on C54 titanium silicide thin films using transmission electron microscopy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermally processed titanium oxides film on Si(001) surface studied with scanning tunneling microscopy/spectroscopy;Applied Surface Science;2010-12

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