10.3131/jvsj2.51.228-Reference-Cited by-同舟云学术

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10.3131/jvsj2.51.228

Published:2008 Issue:3 Volume:51 Page:228-231
ISSN:1882-4749
Container-title:Journal of the Vacuum Society of Japan
language:
Short-container-title:J. Vac. Soc. Jpn.

Author:

KAMEDA Naoto,SAITO Shigeru,NISHIGUCHI Tetsuya,MORIKAWA Yoshiki,KEKURA Mitsuru,NONAKA Hidehiko,ICHIMURA Shingo

Publisher

The Vacuum Society of Japan

Subject

Spectroscopy,Surfaces and Interfaces,Instrumentation,General Materials Science

Reference14 articles.

1. Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone

2. Ultra-low Temperature Oxidation of Silicon using UV Light-exited Ozone in Wafer-transfer Type Chamber

3. Analysis of O(1D) Distribution by Time-Resolved Measurement of Ozone Density for Application of UV-light Excited Ozone to Oxidation Process

4. High Quality Gate Dielectric Film on Poly-Silicon Grown at Room Temperature using UV Light Excited Ozone

5. Oxidation on Poly Silicon at Low Temperature Using UV Light-excited Ozone Gas

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in Chemical-Vapor-Deposited-SiO2Film Properties by Annealing with UV-Light-Excited Ozone;Japanese Journal of Applied Physics;2009-11-20

2. Reformation of CVD-SiO2 Films by UV Irradiation in Highly Concentrated Ozone;Journal of the Vacuum Society of Japan;2009

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