Image Electronics Information Sensing

Author:

Sugawa Shigetoshi1,Ohtake Hiroshi2,Ikebe Masayuki3,Sato Toshiaki4,Kobayashi Masahiro5,Kuroda Rihito1,Hamamoto Takayuki6,Komuro Takashi7,Tokuda Takashi8,Yamashita Takayuki2,Tsunai Shiro9,Hirose Yutaka10,Akai Daisuke11,Yamamoto Hiroo12

Affiliation:

1. Graduate School of Engineering, Tohoku University

2. Science and Technology Research Laboratories, NHK

3. Graduate School of Information Science and Technology, Hokkaido University

4. ON Semiconductor

5. Canon Inc.

6. Faculty of Engineering, Tokyo University of Science

7. Graduate School of Science and Engineering, Saitama University

8. Graduate School of Materials Science, Nara Institute of Science Technology

9. Nikon Corporation

10. Panasonic Corporation

11. Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology

12. Hamamatsu Photonics K.K.

Publisher

Institute of Image Information and Television Engineers

Subject

Electrical and Electronic Engineering,Computer Science Applications,Media Technology

Reference145 articles.

1. 1)篠原ほか:“1.2 μm 裏面照射型イメージセンサにおける飽和信号増大と混色抑制のための3次元構造”,映情学技報,38, 15, pp.7-10(2014)

2. 2)江崎ほか:“湾曲CMOSイメージセンサ”,映情学技報,38, 37, pp.1-4(2014)

3. 3)小林ほか:“像面位相差AF と撮像とを全画素で両立した低ノイズ・高感度CMOSイメージセンサ”,映情学技報,39, 35, pp.1-4(2015)

4. 4)A. Morimitsu, et al.: "A 4M pixel full-PDAF CMOS image sensorwith 1.58 μm 2×1 On-Chip Micro-Split-Lens technology", 映情学技報,39, 36, pp.5-8(2015)

5. 5)沖野ほか:“広ダイナミックレンジ・低ノイズ有機CMOSイメージセンサ”,映情学技報,38, 15, pp.1-4(2014)

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