Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy-Reference-Cited by-同舟云学术

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Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy

Published:1995-05 Issue:3 Volume:13 Page:602-606
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wu W.,Skala S. L.,Tucker J. R.,Lyding J. W.,Seabaugh A.,Beam E. A.,Jovanovic D.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579793

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Transport Imaging of Active Lateral Devices: Static and Frequency Dependent Modes;Kelvin Probe Force Microscopy;2018

2. Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors;Applied Surface Science;2014-03

3. Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures;Brazilian Journal of Physics;2006-06

4. The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface;Russian Physics Journal;2006-06

5. Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode;Journal of Crystal Growth;2006-01

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