(110) surface states of GaAs and matrix element effects in angle‐resolved photoemission-Reference-Cited by-同舟云学术

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(110) surface states of GaAs and matrix element effects in angle‐resolved photoemission

Published:1978-07 Issue:4 Volume:15 Page:1244-1248
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Chadi D. J.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.569746

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Angle-Resolved Photoemission as a Tool for the Study of Surfaces;Advances in Chemical Physics;2007-03-14

2. Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally coordinated compound semiconductors;Surface Science;1994-01

3. Energy-minimization approach to the atomic geometry of semiconductor surfaces;Surface Science;1994-01

4. Surface atomic and electronic structure of cassiteriteSnO2(110);Physical Review B;1993-03-15

5. Chapter 5 Surface States on Semiconductors;Angle-Resolved Photoemission - Theory and Current Applications;1992

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