On the geometrical structure of cleaved Si (111) surfaces
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569744
Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Angle-Resolved Photoemission as a Tool for the Study of Surfaces;Advances in Chemical Physics;2007-03-14
2. In Situ Processing by Gas or Alkali Metal Dosing and by Cleavage;Specimen Handling, Preparation, and Treatments in Surface Characterization;2002
3. Scanning tunneling microscopy and low energy electron diffraction study of the formation of a √3×√3R30° reconstruction on the hydrogen etched Si(111) 1×1 surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-09
4. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07
5. Adsorption of tin on the (111) and (100) silicon and germanium surfaces: A theoretical study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
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