Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors
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Published:1999
Issue:4
Volume:17
Page:1456
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Lin C.-F.,Tseng W. T.,Feng M. S.,Wang Y. L.
Publisher
American Vacuum Society
Subject
General Engineering