Effects of growth temperature on the incorporation of nitrogen in GaNAs layers
-
Published:2016-03
Issue:2
Volume:34
Page:02L111
-
ISSN:2166-2746
-
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
-
language:en
-
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Author:
Espinoza-Figueroa José Ángel,Méndez-García Víctor Hugo,Vidal Miguel Ángel,Cruz-Hernández Esteban,López-López Máximo,Gallardo-Hernández Salvador
Funder
Consejo Nacional de Ciencia y Tecnología (CONACYT)
Universidad Autónoma de San Luis Potosí (UASLP)
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Si doping mechanism in Si doped GaAsN;Journal of Crystal Growth;2019-05