Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy-Reference-Cited by-同舟云学术

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Interfacial reaction effects in the growth of MgO on GaAs(001) by reactive molecular beam epitaxy

Published:1998-07 Issue:4 Volume:16 Page:2423-2428
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Robey S. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581413

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of titanium at the SrTiO 3 /GaAs epitaxial interface;Journal of Crystal Growth;2016-01

2. A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications;Science and Technology of Advanced Materials;2015-06-20

3. Focus on materials challenges for protection - environment and health;Science and Technology of Advanced Materials;2015-06-20

4. Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer;Thin Solid Films;2014-07

5. Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface;physica status solidi (RRL) - Rapid Research Letters;2013-11-19

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