Experimental observations and modeling of ultra-shallow BF2 and As implants in single-crystal silicon-Reference-Cited by-同舟云学术

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Experimental observations and modeling of ultra-shallow BF2 and As implants in single-crystal silicon

Published:1994-01 Issue:1 Volume:12 Page:166
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tasch A. F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. YOLOv4-Based Semiconductor Wafer Notch Detection Using Deep Learning and Image Enhancement Algorithms;International Journal of Precision Engineering and Manufacturing;2024-08-16

2. Tight-Binding Quantum Chemical Molecular Dynamics Study on Depth Profile Prediction in Low Energy Boron Implantation Process;Japanese Journal of Applied Physics;2005-04-21

3. Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC;Journal of Applied Physics;2003-01-15

4. Scanning probe microscopy characterisation of masked low energy implanted nanometer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-02

5. Channeling of low-energy implanted ions through the poly-Si gate;IEEE Electron Device Letters;1999-07

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