Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy-Reference-Cited by-同舟云学术

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Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

Published:2018-09 Issue:5 Volume:36 Page:051503
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Boris David R.¹,Anderson Virginia R.²,Nepal Neeraj¹,Johnson Scooter D.¹,Robinson Zachary R.³,Kozen Alexander C.²,Eddy Charles R.¹,Walton Scott G.¹

Affiliation:

1. U.S. Naval Research Laboratory, 4555 Overlook Ave., SW Washington, DC 20375

2. U.S. Naval Research Laboratory, Electronics Division, 4555 Overlook Ave., SW Washington, DC 20375

3. Department of Physics, The College at Brockport, State University of New York, 350 New Campus Drive, Brockport, New York 14420

Funder

Naval Research Laboratory Base Program

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5034247

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote inductively coupled plasmas in Ar/N2 mixtures and implications for plasma enhanced ALD;Journal of Vacuum Science & Technology A;2024-04-10

2. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024

3. Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys;Crystal Growth & Design;2023-09-19

4. Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition;Journal of Vacuum Science & Technology A;2022-12

5. Atomic Layer Deposition for Electrochemical Energy: from Design to Industrialization;Electrochemical Energy Reviews;2022-11-24

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