Plasma-assisted atomic layer deposition of TiN monitored byin situspectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Plasma-assisted atomic layer deposition of TiN monitored byin situspectroscopic ellipsometry

Published:2005-07 Issue:4 Volume:23 Page:L5-L8
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Heil S. B. S.,Langereis E.,Kemmeren A.,Roozeboom F.,van de Sanden M. C. M.,Kessels W. M. M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1938981

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy;Japanese Journal of Applied Physics;2023-05-02

2. Thermal Atomic Layer Deposition of TiNx Using TiCl4 and N2H4;Russian Microelectronics;2020-11

3. Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition;Crystal Growth & Design;2019-03-14

4. Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition;Journal of Vacuum Science & Technology A;2019-03

5. First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina;Physical Chemistry Chemical Physics;2018

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