Atom movements occurring at solid metal-semiconductor interfaces-Reference-Cited by-同舟云学术

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Atom movements occurring at solid metal-semiconductor interfaces

Published:1974-11 Issue:6 Volume:11 Page:990-995
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

McCaldin J. O.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1318718

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Al‐Ge Reflow Sputtering for Submicron Contact Hole Filling;Journal of The Electrochemical Society;1996-01-01

4. Crystallization and decomposition of co-sputtered amorphous silicon-aluminum thin films;Materials Chemistry and Physics;1993-09

5. Parallel and perpendicular hole transport in heterostructures with high AlAs mole‐fraction barriers;Applied Physics Letters;1991-03-04

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