Lateral straggle of Si and Be focused-ion beam implanted in GaAs
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Published:1993-05
Issue:3
Volume:11
Page:581
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
3 articles.
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1. CO-implantation of Si and Be in SI GaAs for improved device performance;Solid-State Electronics;1998-11
2. A closed UHV focused ion beam patterning and MBE regrowth technique;Materials Science and Engineering: B;1995-12
3. Observation and simulation of focused ion beam induced damage;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-09