Dry etching of InP using a CH[sub 3]Cl/Ar/H[sub 2] gas mixture with electron-cyclotron-resonance excitation
-
Published:1998-03
Issue:2
Volume:16
Page:515
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasma Processing of III-V Materials;Handbook of Advanced Plasma Processing Techniques;2000