Carrier transport coefficients across GaAs–GaAlAs (100) interfaces
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.570242
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Multiband quantum transport with Γ–X valley-mixing via evanescent states;Solid-State Electronics;1998-07
2. The electronic transmittance and density of states in triangular quantum well and barrier structures;Journal of Physics: Condensed Matter;1996-10-07
3. Modeling and experimental results for C(V) in an abrupt isotype n Al/sub 0.5/Ga/sub 0.5/As/GaAs heterojunction;IEEE Transactions on Electron Devices;1993
4. Evidence of Γ-Γ and X-X coupling using a single abrupt isotype n-GaAs/Al0.5Ga0.5As heterojunction;Solid-State Electronics;1992-08
5. Field impoverishment modes in a diode with an AlxGa1−xAS/GaAs heterojunction: a simulation analysis;IEE Proceedings G Circuits, Devices and Systems;1991
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