Increased bismuth concentration in MBE GaAs1−xBix films by oscillating III/V flux ratio during growth-Reference-Cited by-同舟云学术

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Increased bismuth concentration in MBE GaAs1−xBix films by oscillating III/V flux ratio during growth

Published:2015-05 Issue:3 Volume:33 Page:031506
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wood Adam W.,Babcock Susan E.,Li Jincheng,Brown April S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4916575

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys;Thin Solid Films;2024-03

2. GaAsBi: From Molecular Beam Epitaxy Growth to Devices;physica status solidi (b);2021-11-21

3. Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth;Journal of Crystal Growth;2019-04

4. In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy;Materials Science and Engineering: B;2019-02

5. Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy;Journal of Electronic Materials;2019-01-31

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