Low‐temperature photoluminescence study of doped CdTe films grown by photoassisted molecular‐beam epitaxy-Reference-Cited by-同舟云学术

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Low‐temperature photoluminescence study of doped CdTe films grown by photoassisted molecular‐beam epitaxy

Published:1987-09 Issue:5 Volume:5 Page:3064-3069
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Giles N. C.,Bicknell R. N.,Schetzina J. F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574217

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors;Journal of Applied Physics;2018-05-14

2. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes;Journal of Physics D: Applied Physics;2017-11-22

3. Low-temperature Photoluminescence Studies of CdTe Thin Films Deposited on CdS/ZnO/Glass Substrates;MRS Proceedings;2013

4. Defect equilibria in In- and Ga-doped CdTe;Inorganic Materials;2002

5. Effects of hydrogenation and annealing on the shallow donor-band recombination in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates;Journal of Physics and Chemistry of Solids;2000-05

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