Effect of the plasma confinement on properties of a-C:H:SiOx films grown by plasma enhanced chemical vapor deposition
Author:
Affiliation:
1. Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, 2/3 Akademichesky ave., Tomsk 634055, Russia
Funder
Russian Science Foundation
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.5118852
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