Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer-Reference-Cited by-同舟云学术

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Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer

Published:2013-11 Issue:6 Volume:31 Page:061207
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Chiu Pei-Chin,Hsueh Wei-Jen,Yeh Nien-Tze,Cheng Chao-Ching,Lin You-Ru,Ko Chih-Hsin,Wann Clement H.,Chyi Jen-Inn

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4827266

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy;Chinese Physics B;2019-02

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