High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology-Reference-Cited by-同舟云学术

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High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology

Published:1978-03 Issue:2 Volume:15 Page:227-230
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Schwarz S. A.,Helms C. R.,Spicer W. E.,Taylor N. J.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.569485

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Arsenic Pileup at the SiO2 / Si Interface;Journal of The Electrochemical Society;1995-02-01

2. The Profile of Electrically Active Phosphorus in Silicon after Thermal Oxidation;Journal of The Electrochemical Society;1994-12-01

3. Determination of phosphorus distribution in the region of a SiO2−Si interface by substoichiometric analysis;Journal of Radioanalytical and Nuclear Chemistry Articles;1994-11

4. Detection of Phosphorus Pileup at SiO2 / Si Interface;Journal of The Electrochemical Society;1993-12-01

5. Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface;Journal of The Electrochemical Society;1993-09-01

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